Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor | Scientific Reports
Color online) Electronic band structure and corresponding total and... | Download Scientific Diagram
A new 2D Si3X(X=S, 0) direct band gap semiconductor with anisotropic carrier mobility - ScienceDirect
Monolayer MoS2 for nanoscale photonics
![PDF] Atomically thin MoS₂: a new direct-gap semiconductor. | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/2761ca088880738b755f7ec37cd38ef60dd32027/1-Figure1-1.png "PDF] Atomically thin MoS₂: a new direct-gap semiconductor. | Semantic Scholar")
PDF] Atomically thin MoS₂: a new direct-gap semiconductor. | Semantic Scholar
Frontiers | Bandgap Engineering and Near-Infrared-II Optical Properties of Monolayer MoS2: A First-Principle Study | Chemistry
![PDF] Stability of direct band gap under mechanical strains for monolayer MoS2, MoSe2, WS2 and WSe2 | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/eb97341c6eb9a8ac06d62077659f758122f22df6/5-Table1-1.png "PDF] Stability of direct band gap under mechanical strains for monolayer MoS2, MoSe2, WS2 and WSe2 | Semantic Scholar")
PDF] Stability of direct band gap under mechanical strains for monolayer MoS2, MoSe2, WS2 and WSe2 | Semantic Scholar
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 | SpringerLink
![PDF] Indirect-to-direct band gap crossover in few-layer MoTe₂. | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/7916623ea769c2ccd8b2e8b1258e8ecd77bff64a/2-Figure1-1.png "PDF] Indirect-to-direct band gap crossover in few-layer MoTe₂. | Semantic Scholar")
PDF] Indirect-to-direct band gap crossover in few-layer MoTe₂. | Semantic Scholar
Monolayer MoS2 for nanoscale photonics
Atomically thin p–n junctions with van der Waals heterointerfaces | Nature Nanotechnology
Excitons in atomically thin 2D semiconductors and their applications
Bandgap tunability at single-layer molybdenum disulphide grain boundaries | Nature Communications
Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap Transitions - Zhang - 2015 - Angewandte Chemie International Edition - Wiley Online Library
PDF) Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Direct bandgap engineering with local biaxial strain in few-layer MoS2 bubbles | SpringerLink
Nanomaterials | Free Full-Text | Benchmark Investigation of Band-Gap Tunability of Monolayer Semiconductors under Hydrostatic Pressure with Focus-On Antimony | HTML
Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts | Scientific Reports
PDF) Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Photoconversion efficiency in atomically thin TMDC-based heterostructures
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures | Scientific Reports
Molybdenum Disulfide, MoS2: Theory, Structure & Applications | Ossila
Phys. Rev. Lett. 105, 136805 (2010) - Atomically Thin ${\mathrm{MoS}}_{2}$: A New Direct-Gap Semiconductor
Frontiers | Two-Dimensional Semiconductor Heterojunctions for Optoelectronics and Electronics | Energy Research
Strain engineering band gap, effective mass and anisotropic Dirac-like cone in monolayer arsenene: AIP Advances: Vol 6, No 3
